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| inchange semiconductor isc product specification isc silicon pnp power transistor BD636 description dc current gain - : h fe = 40(min.)@ i c = - 25ma collector-emitter breakdown voltage- : v (br)ceo = -60v(min.) complement to type bd635 applications designed for amplifier and switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -5 v i c collector current-continuous -2 a i cm collector current-peak -5 a i b b base current-continuous -0.3 a collector power dissipation @ t a =25 2 p c collector power dissipation @ t c =25 30 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor BD636 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)ceo collector-emitter breakdown voltage i c = -30ma; i b = 0 -60 v v (br)cbo collector-base breakdown voltage i c = -0.1ma; i e = 0 -60 v v (br)ebo emitter-base breakdown voltage i e = -1ma; i c = 0 -5 v v ce( sat ) collector-emitter saturation voltage i c = -1a; i b = -0.1a b -0.6 v v be( on ) base-emitter on voltage i c = -1a; v ce = -2v -1.3 v i ces collector cutoff current v ce = -60v; v be = 0 -0.2 ma h fe-1 dc current gain i c = -25ma; v ce = -2v 40 h fe-2 dc current gain i c = -1a; v ce = -2v 25 isc website www.iscsemi.cn 2 |
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